Parametric results for: FSU01LG under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY, LOW NOISE 3

4 hits Apply

SOURCE 3

4 hits Apply

Configuration (1)

SINGLE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

12 V 3

4 hits Apply

JUNCTION 3

4 hits Apply

Highest Frequency Band (1)

L BAND 3

4 hits Apply

O-XRDB-F4 1 X-CXDB-F4 3

4 hits Apply

Manufacturer (4)

FUJITSU Limited 1 FUJITSU Semiconductor Limited 1 SUMITOMO ELECTRIC Device Innovations Inc 1 SUMITOMO ELECTRIC Industries Ltd 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

DEPLETION MODE 3

4 hits Apply

175.0 °C 1

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 3 UNSPECIFIED 1

4 hits Apply

ROUND 1 UNSPECIFIED 3

4 hits Apply

DISK BUTTON 4

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

Yes 2

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

375 mW 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply