Parametric results for: FSYC260R4 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 2

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 4

4 hits Apply

Drain Current-Max (ID) (1)

46 A 4

4 hits Apply

Drain-source On Resistance-Max (2)

50 mΩ 3 87 mΩ 1

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-CBCC-N3 3 R-CDSO-N3 1

4 hits Apply

e0 4

4 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 1 International Rectifier 1 Intersil Corporation 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

CHIP CARRIER 3 SMALL OUTLINE 1

4 hits Apply

Obsolete 1 Transferred 3

4 hits Apply

No 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

208 W 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply