Parametric results for: FX601 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Functions Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

5 hits Apply

Configuration (2)

SEPARATE, 2 ELEMENTS 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

12 V 4

5 hits Apply

Drain Current-Max (ID) (1)

1 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

630 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

O-MBCY-W10 1 R-PDFP-F6 2 R-PDSO-F6 1 R-PSSO-F6 1

5 hits Apply

e0 1

5 hits Apply

Manufacturer (2)

CML Microcircuits Plc 1 SANYO Electric Co Ltd 4

5 hits Apply

Number of Elements (1)

2 4

5 hits Apply

1.0 1

5 hits Apply

Number of Terminals (2)

10 1 6 4

5 hits Apply

DEPLETION MODE 1 ENHANCEMENT MODE 3

5 hits Apply

85.0 °C 1

5 hits Apply

-30.0 °C 1

5 hits Apply

METAL 1 PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4 ROUND 1

5 hits Apply

CYLINDRICAL 1 FLATPACK 2 SMALL OUTLINE 2

5 hits Apply

Obsolete 5

5 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 1 P-CHANNEL 2

5 hits Apply

1.5 W 1

5 hits Apply

1.5 W 1

5 hits Apply

Surface Mount (2)

NO 1 YES 4

5 hits Apply