Parametric results for: GA1L4L-T1 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT IN BIAS RESISTANCE RATIO IS 0.468 1

3 hits Apply

Collector Current-Max (IC) (2)

100 mA 1 200 mA 2

Min (A) - Max (A)

3 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 1

3 hits Apply

DC Current Gain-Min (hFE) (2)

60.0 2 90.0 1

Min - Max

3 hits Apply

R-PDSO-G3 1

3 hits Apply

Manufacturer (2)

NEC Electronics Group 1 Renesas Electronics Corporation 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

Not Recommended 1 Obsolete 2

3 hits Apply

Yes 1

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

150 mW 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply