Parametric results for: GT60M32306 under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Voltage-Max JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH SPEED 1

1 hit Apply

COLLECTOR 1

1 hit Apply

Collector Current-Max (IC) (1)

60 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

900 V 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

200 ns 1

1 hit Apply

25 V 1

1 hit Apply

R-PSFM-T3 1

1 hit Apply

e0 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

200 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply