Parametric results for: GT60N32 under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Voltage-Max JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH SPEED 2

2 hits Apply

COLLECTOR 2

2 hits Apply

Collector Current-Max (IC) (2)

57 A 1 60 A 1

Min (A) - Max (A)

2 hits Apply

Collector-Emitter Voltage-Max (1)

1 kV 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

220 ns 1 400 ns 1

Min (ns) - Max (ns)

2 hits Apply

25 V 2

2 hits Apply

R-PSFM-T3 2

2 hits Apply

e0 1

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

End Of Life 1 Obsolete 1

2 hits Apply

No 1

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

170 W 1 200 W 1

Min (W) - Max (W)

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply