Parametric results for: H5N2519P under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

250 V 1

1 hit Apply

Drain Current-Max (ID) (1)

65 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

35 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PSFM-T3 1

1 hit Apply

e2 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

1 hit Apply

1 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

125.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Not Recommended 1

1 hit Apply

Yes 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

150 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply