Parametric results for: HAF2007S under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT 2 LOGIC LEVEL COMPATIBLE 1

7 hits Apply

DRAIN 3

7 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 3

7 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

7 hits Apply

Drain Current-Max (ID) (1)

5 A 7

7 hits Apply

Drain-source On Resistance-Max (1)

120 mΩ 3

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

7 hits Apply

R-PSSO-G2 3

7 hits Apply

Manufacturer (2)

Hitachi Ltd 3 Renesas Electronics Corporation 4

7 hits Apply

Number of Elements (1)

1 7

7 hits Apply

Number of Terminals (1)

2 3

7 hits Apply

ENHANCEMENT MODE 7

7 hits Apply

150.0 °C 4

7 hits Apply

PLASTIC/EPOXY 3

7 hits Apply

RECTANGULAR 3

7 hits Apply

SMALL OUTLINE 3

7 hits Apply

Active 3 Transferred 4

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

7 hits Apply

20 W 4

7 hits Apply

Surface Mount (1)

YES 7

7 hits Apply