Parametric results for: HAT1024R under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 5

5 hits Apply

Drain Current-Max (ID) (1)

3.5 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

340 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

MS-012AA 2

5 hits Apply

R-PDSO-G8 5

5 hits Apply

Manufacturer (2)

Hitachi Ltd 2 Renesas Electronics Corporation 3

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

2 3

5 hits Apply

Number of Terminals (1)

8 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Not Recommended 1 Obsolete 2 Transferred 2

5 hits Apply

Yes 1

5 hits Apply

260 1

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

5 hits Apply

3 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply