Parametric results for: HAT2105T under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

200 V 1

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Drain Current-Max (ID) (1)

500 mA 1

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Drain-source On Resistance-Max (1)

5.5 Ω 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-PDSO-G8 1

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Manufacturer (1)

Renesas Electronics Corporation 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

8 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Obsolete 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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1.5 W 1

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Surface Mount (1)

YES 1

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