Parametric results for: HF30-28S under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

EMITTER 1

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Collector Current-Max (IC) (1)

5 A 1

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65 pF 1

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Collector-Emitter Voltage-Max (1)

35 V 1

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Configuration (1)

SINGLE 1

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DC Current Gain-Min (hFE) (1)

5.0 1

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Highest Frequency Band (1)

HIGH FREQUENCY BAND 1

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O-CRPM-F4 1

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Manufacturer (1)

Advanced Semiconductor Inc 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

1 hit Apply

200.0 °C 1

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CERAMIC, METAL-SEALED COFIRED 1

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ROUND 1

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POST/STUD MOUNT 1

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Active 1

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Polarity/Channel Type (1)

NPN 1

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60 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply