Parametric results for: HUF75307T3ST under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

55 V 5

5 hits Apply

Drain Current-Max (ID) (1)

2.6 A 5

5 hits Apply

Drain-source On Resistance-Max (2)

9 mΩ 3 90 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-261AA 1

5 hits Apply

R-PDSO-G4 5

5 hits Apply

e0 1 e3 2

5 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 2 Harris Semiconductor 1 Intersil Corporation 1 Rochester Electronics LLC 1

5 hits Apply

1 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2 175.0 °C 1

Min (°C) - Max (°C)

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 1 Obsolete 3 Transferred 1

5 hits Apply

Yes 2

5 hits Apply

260 2 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

1.1 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply