Parametric results for: HUF75333G3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

55 V 4

4 hits Apply

Drain Current-Max (ID) (2)

56 A 3 66 A 1

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

16 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-247 4

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e0 4

4 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 1 Intersil Corporation 1 Rochester Electronics LLC 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 3

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

No 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

111 W 2

4 hits Apply

111 W 2 150 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply