Parametric results for: HUF75339S3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 11

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

55 V 11

11 hits Apply

Drain Current-Max (ID) (2)

70 A 8 75 A 3

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (1)

12 mΩ 11

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-262AA 4 TO-263AB 7

11 hits Apply

R-PSIP-T3 4 R-PSSO-G2 7

11 hits Apply

e0 8

11 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 3 Harris Semiconductor 3 Intersil Corporation 3 Rochester Electronics LLC 2

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (2)

2 7 3 4

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

175.0 °C 8

11 hits Apply

PLASTIC/EPOXY 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

IN-LINE 4 SMALL OUTLINE 7

11 hits Apply

Active 2 Obsolete 6 Transferred 3

11 hits Apply

No 1

11 hits Apply

NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

124 W 5

11 hits Apply

124 W 5 200 W 2

Min (W) - Max (W)

11 hits Apply

Surface Mount (2)

NO 4 YES 7

11 hits Apply