Parametric results for: HUF76121S3S under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 2

8 hits Apply

DRAIN 8

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

30 V 8

8 hits Apply

Drain Current-Max (ID) (1)

47 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

28 mΩ 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

TO-263AB 8

8 hits Apply

R-PSSO-G2 8

8 hits Apply

e0 5 e3 1

8 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 2 Harris Semiconductor 2 Intersil Corporation 2 Rochester Electronics LLC 2

8 hits Apply

1 1 NOT SPECIFIED 2

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

2 8

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 2 175.0 °C 3

Min (°C) - Max (°C)

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

SMALL OUTLINE 8

8 hits Apply

Active 2 Obsolete 4 Transferred 2

8 hits Apply

No 1 Yes 1

8 hits Apply

NOT SPECIFIED 2

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

75 W 2 90 W 3

Min (W) - Max (W)

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply