Parametric results for: HUF76629D3S under Power Field-Effect Transistors

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Manufacturer Part Number: huf76629d3s
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HUF76629D3ST
onsemi
$1.7428 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 20 A 55 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE ONSEMI 369AS not_compliant EAR99 onsemi
HUF76629D3ST
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 20 A 55 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB not_compliant EAR99 DPAK 3 8541.29.00.95
HUF76629D3ST_NL
Fairchild Semiconductor Corporation
Check for Price Yes Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 20 A 55 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP not_compliant EAR99
HUF76629D3ST_NL
Rochester Electronics LLC
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 20 A 55 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-252AA R-PSSO-G2 e3 COMMERCIAL 1 260 NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE ROCHESTER ELECTRONICS LLC unknown
HUF76629D3ST
Intersil Corporation
Check for Price No Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 20 A 55 mΩ ULTRA LOW RESISTANCE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W SWITCHING SILICON TO-252AA R-PSSO-G2 e0 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin/Lead (Sn/Pb) GULL WING SINGLE INTERSIL CORP not_compliant EAR99
HUF76629D3S
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 20 A 55 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 110 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP not_compliant EAR99 8541.29.00.95
HUF76629D3S
Intersil Corporation
Check for Price No Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 20 A 55 mΩ ULTRA LOW RESISTANCE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W SWITCHING SILICON TO-252AA R-PSSO-G2 e0 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin/Lead (Sn/Pb) GULL WING SINGLE INTERSIL CORP not_compliant EAR99
HUF76629D3S
Rochester Electronics LLC
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 20 A 55 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-252AA R-PSSO-G2 e3 COMMERCIAL NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE ROCHESTER ELECTRONICS LLC unknown
HUF76629D3ST_F085
Fairchild Semiconductor Corporation
Check for Price Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 20 A 55 mΩ 231 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W SWITCHING SILICON TO-252 R-PSSO-G2 e3 AEC-Q101 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE FAIRCHILD SEMICONDUCTOR CORP not_compliant EAR99 ROHS COMPLIANT, DPAK-3/2
HUF76629D3ST-F085
onsemi
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 231 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-252 R-PSSO-G2 e3 AEC-Q101 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE ON SEMICONDUCTOR not_compliant EAR99 onsemi SMALL OUTLINE, R-PSSO-G2