Parametric results for: INFINEON TRICORE FLASH PR... under Flash Memories

Filter Your Search

1 - 10 of 2,830 results

|
-
-
-
-
-
-
-
-
-
-
-
-
-
Manufacturer: Infineon Technologies AG
Select parts from the table below to compare.
Compare
Compare
S25FL256LDPNFB013
Infineon Technologies AG
$1.0000 Yes Active 268.4355 Mbit 8 32MX8 3 V 66 MHz FLASH 20 100000 Write/Erase Cycles 1 32000000 33.5544 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 60 µA 50 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE HARDWARE/SOFTWARE R-PDSO-N8 e3 3 105 °C -40 °C NOT SPECIFIED AEC-Q100 NOT SPECIFIED 8 PLASTIC/EPOXY HVQCCN SOLCC8,.25 RECTANGULAR CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 1.27 mm DUAL 800 µm 6 mm 5 mm INFINEON TECHNOLOGIES AG WSON-8 compliant
S25FL256LDPNFB010
Infineon Technologies AG
$1.0000 Yes Active 268.4355 Mbit 8 32MX8 3 V 66 MHz FLASH 20 100000 Write/Erase Cycles 1 32000000 33.5544 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 60 µA 50 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE HARDWARE/SOFTWARE R-PDSO-N8 e3 3 105 °C -40 °C NOT SPECIFIED AEC-Q100 NOT SPECIFIED 8 PLASTIC/EPOXY HVQCCN SOLCC8,.25 RECTANGULAR CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 1.27 mm DUAL 800 µm 6 mm 5 mm INFINEON TECHNOLOGIES AG WSON-8 compliant
S25FL512SAGBHMA13
Infineon Technologies AG
$1.0000 Yes Active 512.7537 Mbit 8 64MX8 3 V 133 MHz FLASH 20 100000 Write/Erase Cycles 1 64000000 64.0942 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 300 µA 100 µA 3.6 V 2.7 V CMOS AUTOMOTIVE NOR TYPE HARDWARE/SOFTWARE R-PBGA-B24 e1 3 125 °C -40 °C NOT SPECIFIED AEC-Q100 NOT SPECIFIED 24 PLASTIC/EPOXY TBGA BGA24,5X5,40 RECTANGULAR GRID ARRAY, THIN PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.2 mm 8 mm 6 mm INFINEON TECHNOLOGIES AG BGA-24 compliant
S29GL128S11FHVV23
Infineon Technologies AG
$1.0000 Yes Active 134.2177 Mbit 16 64K 8MX16 3 V 110 ns FLASH YES YES YES 20 100000 Write/Erase Cycles 1 128 8000000 8.3886 M ASYNCHRONOUS 3-STATE 16 words PARALLEL 3 V YES 200 µA 100 µA 3.6 V 2.7 V CMOS YES NOR TYPE R-PBGA-B64 e1 3 105 °C -40 °C 260 30 64 PLASTIC/EPOXY LBGA BGA64,8X8,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 13 mm 11 mm INFINEON TECHNOLOGIES AG compliant
S29GL128S11FHVV20
Infineon Technologies AG
$1.0000 Yes Active 134.2177 Mbit 16 64K 8MX16 3 V 110 ns FLASH YES YES YES 20 100000 Write/Erase Cycles 1 128 8000000 8.3886 M ASYNCHRONOUS 3-STATE 16 words PARALLEL 3 V YES 200 µA 100 µA 3.6 V 2.7 V CMOS YES NOR TYPE R-PBGA-B64 e1 3 105 °C -40 °C 260 30 64 PLASTIC/EPOXY LBGA BGA64,8X8,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 13 mm 11 mm INFINEON TECHNOLOGIES AG compliant
S25FL512SAGBHMA10
Infineon Technologies AG
$1.0000 Yes Active 512.7537 Mbit 8 64MX8 3 V 133 MHz FLASH 20 100000 Write/Erase Cycles 1 64000000 64.0942 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 300 µA 100 µA 3.6 V 2.7 V CMOS AUTOMOTIVE NOR TYPE HARDWARE/SOFTWARE R-PBGA-B24 e1 3 125 °C -40 °C NOT SPECIFIED AEC-Q100 NOT SPECIFIED 24 PLASTIC/EPOXY TBGA BGA24,5X5,40 RECTANGULAR GRID ARRAY, THIN PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.2 mm 8 mm 6 mm INFINEON TECHNOLOGIES AG BGA-24 compliant Infineon
S29AL008J70TFI013
Infineon Technologies AG
$1.5373 Yes Not Recommended 8.3886 Mbit 16 8K,4K,16K,32K 512KX16 3 V 70 ns FLASH DATA RETENTION 20 YEARS TYPICAL AVAILABLE 8 TOP YES YES YES 1000000 Write/Erase Cycles 1 1,2,1,15 512000 524.288 k ASYNCHRONOUS 3-STATE PARALLEL 3 V YES 5 µA 12 µA 3.6 V 2.7 V CMOS YES NOR TYPE R-PDSO-G48 e3 3 85 °C -40 °C 260 40 48 PLASTIC/EPOXY TSSOP TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm INFINEON TECHNOLOGIES AG TSOP-48 compliant Infineon
S25FL064LABNFA010
Infineon Technologies AG
$1.6044 Yes Active 67.1089 Mbit 8 8MX8 3 V 108 MHz FLASH IT ALSO HAVE X1 MEMORY WIDTH 2 1 8000000 8.3886 M SYNCHRONOUS 3-STATE SERIAL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL S-PDSO-N8 e3 3 85 °C -40 °C NOT SPECIFIED AEC-Q100 NOT SPECIFIED 8 PLASTIC/EPOXY HVSON SQUARE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 800 µm DUAL 600 µm 4 mm 4 mm INFINEON TECHNOLOGIES AG compliant Infineon
S25FL064LABBHI030
Infineon Technologies AG
$1.7975 Yes Obsolete 67.1089 Mbit 8 8MX8 3 V 108 MHz FLASH IT ALSO HAVE X1 MEMORY WIDTH 20 1 8000000 8.3886 M SYNCHRONOUS SERIAL 3 V SPI 55 µA 30 nA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE HARDWARE/SOFTWARE R-PBGA-B24 e1 3 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 24 PLASTIC/EPOXY TBGA BGA24,5X5,40 RECTANGULAR GRID ARRAY, THIN PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.2 mm 8 mm 6 mm INFINEON TECHNOLOGIES AG compliant Infineon
S25FL064LABNFI043
Infineon Technologies AG
$1.8396 Yes Active 67.1089 Mbit 8 8MX8 3 V 108 MHz FLASH IT IS ALSO CONFIGURED AS 64M X 1 2 1 8000000 8.3886 M SYNCHRONOUS 3-STATE SERIAL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL S-PDSO-N8 e3 3 85 °C -40 °C 260 30 8 PLASTIC/EPOXY HVSON SQUARE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 800 µm DUAL 600 µm 4 mm 4 mm INFINEON TECHNOLOGIES AG compliant Infineon