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S25FL256LDPNFB013
Infineon Technologies AG
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$1.0000 | Yes | Active | 268.4355 Mbit | 8 | 32MX8 | 3 V | 66 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 60 µA | 50 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-N8 | e3 | 3 | 105 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | HVQCCN | SOLCC8,.25 | RECTANGULAR | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 1.27 mm | DUAL | 800 µm | 6 mm | 5 mm | INFINEON TECHNOLOGIES AG | WSON-8 | compliant | |||||||||||||||
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S25FL256LDPNFB010
Infineon Technologies AG
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$1.0000 | Yes | Active | 268.4355 Mbit | 8 | 32MX8 | 3 V | 66 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 60 µA | 50 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-N8 | e3 | 3 | 105 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | HVQCCN | SOLCC8,.25 | RECTANGULAR | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 1.27 mm | DUAL | 800 µm | 6 mm | 5 mm | INFINEON TECHNOLOGIES AG | WSON-8 | compliant | |||||||||||||||
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S25FL512SAGBHMA13
Infineon Technologies AG
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$1.0000 | Yes | Active | 512.7537 Mbit | 8 | 64MX8 | 3 V | 133 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 64000000 | 64.0942 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 300 µA | 100 µA | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | NOR TYPE | HARDWARE/SOFTWARE | R-PBGA-B24 | e1 | 3 | 125 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 24 | PLASTIC/EPOXY | TBGA | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.2 mm | 8 mm | 6 mm | INFINEON TECHNOLOGIES AG | BGA-24 | compliant | |||||||||||||||
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S29GL128S11FHVV23
Infineon Technologies AG
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$1.0000 | Yes | Active | 134.2177 Mbit | 16 | 64K | 8MX16 | 3 V | 110 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 128 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 200 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | R-PBGA-B64 | e1 | 3 | 105 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 13 mm | 11 mm | INFINEON TECHNOLOGIES AG | compliant | ||||||||||||
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S29GL128S11FHVV20
Infineon Technologies AG
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$1.0000 | Yes | Active | 134.2177 Mbit | 16 | 64K | 8MX16 | 3 V | 110 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 128 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 200 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | R-PBGA-B64 | e1 | 3 | 105 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 13 mm | 11 mm | INFINEON TECHNOLOGIES AG | compliant | ||||||||||||
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S25FL512SAGBHMA10
Infineon Technologies AG
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$1.0000 | Yes | Active | 512.7537 Mbit | 8 | 64MX8 | 3 V | 133 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 64000000 | 64.0942 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 300 µA | 100 µA | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | NOR TYPE | HARDWARE/SOFTWARE | R-PBGA-B24 | e1 | 3 | 125 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 24 | PLASTIC/EPOXY | TBGA | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.2 mm | 8 mm | 6 mm | INFINEON TECHNOLOGIES AG | BGA-24 | compliant | Infineon | ||||||||||||||
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S29AL008J70TFI013
Infineon Technologies AG
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$1.5373 | Yes | Not Recommended | 8.3886 Mbit | 16 | 8K,4K,16K,32K | 512KX16 | 3 V | 70 ns | FLASH | DATA RETENTION 20 YEARS TYPICAL AVAILABLE | 8 | TOP | YES | YES | YES | 1000000 Write/Erase Cycles | 1 | 1,2,1,15 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | YES | 5 µA | 12 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | R-PDSO-G48 | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | INFINEON TECHNOLOGIES AG | TSOP-48 | compliant | Infineon | |||||||||
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S25FL064LABNFA010
Infineon Technologies AG
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$1.6044 | Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PDSO-N8 | e3 | 3 | 85 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | HVSON | SQUARE | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 800 µm | DUAL | 600 µm | 4 mm | 4 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon | |||||||||||||||||||||
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S25FL064LABBHI030
Infineon Technologies AG
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$1.7975 | Yes | Obsolete | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 20 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | SERIAL | 3 V | SPI | 55 µA | 30 nA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PBGA-B24 | e1 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 24 | PLASTIC/EPOXY | TBGA | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.2 mm | 8 mm | 6 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon | |||||||||||||||||
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S25FL064LABNFI043
Infineon Technologies AG
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$1.8396 | Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT IS ALSO CONFIGURED AS 64M X 1 | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PDSO-N8 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | HVSON | SQUARE | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 800 µm | DUAL | 600 µm | 4 mm | 4 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon |