Parametric results for: IPB100N04S4H2ATMA1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

280.0 mJ 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

40 V 1

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Drain Current-Max (ID) (1)

100 A 1

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Drain-source On Resistance-Max (1)

2.4 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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TO-263AB 1

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R-PSSO-G2 1

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Manufacturer (1)

Infineon Technologies AG 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

2 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

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