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IPB160N04S2L03XT
Infineon Technologies AG
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 160 A | 3.7 mΩ | ULTRA-LOW RESISTANCE | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 640 A | SILICON | TO-263 | R-PSSO-G6 | AEC-Q101 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-7/6 | compliant | EAR99 | |||||||||||||||
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IPB160N04S2L03ATMA1
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 160 A | 3.7 mΩ | ULTRA-LOW RESISTANCE | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 640 A | SILICON | TO-263 | R-PSSO-G6 | AEC-Q101 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G6 | compliant | EAR99 | ||||||||||||
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IPB160N04S2L-03
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 160 A | 3.7 mΩ | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 640 A | SILICON | TO-263 | R-PSSO-G6 | e3 | Not Qualified | 1 | 175 °C | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G6 | compliant | EAR99 | TO-263 | 3 | ||||
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IPB160N04S2L03ATMA2
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 160 A | 3.7 mΩ | ULTRA-LOW RESISTANCE | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 640 A | SILICON | TO-263 | R-PSSO-G6 | e3 | AEC-Q101 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G6 | not_compliant | EAR99 | Infineon |