Parametric results for: IPC218N04N3X1SA1 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

40 V 1

1 hit Apply

Drain-source On Resistance-Max (1)

50 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-XXUC-N 1

1 hit Apply

Manufacturer (1)

Infineon Technologies AG 1

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Number of Elements (1)

1 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

UNCASED CHIP 1

1 hit Apply

Not Recommended 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply