Parametric results for: IPG20N04S4-12A under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

80.0 mJ 2

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

40 V 2

3 hits Apply

Drain Current-Max (ID) (1)

20 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

12.2 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

21 pF 1

3 hits Apply

R-PDSO-F8 2

3 hits Apply

e3 3

3 hits Apply

Manufacturer (1)

Infineon Technologies AG 3

3 hits Apply

1 3

3 hits Apply

Number of Elements (1)

2 2

3 hits Apply

Number of Terminals (1)

8 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

175.0 °C 1

3 hits Apply

-55.0 °C 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Active 3

3 hits Apply

NOT SPECIFIED 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply