Parametric results for: IPG20N04S4L11AATMA1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOGIC LEVEL COMPATIBLE 1

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80.0 mJ 1

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Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

40 V 1

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Drain Current-Max (ID) (1)

20 A 1

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Drain-source On Resistance-Max (1)

11.6 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-PDSO-F8 1

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e3 1

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Manufacturer (1)

Infineon Technologies AG 1

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1 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

8 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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Yes 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

1 hit Apply