Parametric results for: IRF1010S under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

700.0 mJ 4

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

55 V 5

5 hits Apply

Drain Current-Max (ID) (1)

75 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

14 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PSSO-G2 5

5 hits Apply

e0 3 e3 2

5 hits Apply

Manufacturer (1)

International Rectifier 5

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 5

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Obsolete 5

5 hits Apply

No 2 Yes 2

5 hits Apply

225 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

150 W 5

5 hits Apply

150 W 1

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply