Parametric results for: IRF1010ZS under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 10

17 hits Apply

130.0 mJ 16

17 hits Apply

DRAIN 16

17 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 16

17 hits Apply

DS Breakdown Voltage-Min (1)

55 V 16

17 hits Apply

Drain Current-Max (ID) (2)

75 A 10 94 A 6

Min (A) - Max (A)

17 hits Apply

Drain-source On Resistance-Max (1)

7.5 mΩ 16

17 hits Apply

METAL-OXIDE SEMICONDUCTOR 16

17 hits Apply

TO-263AB 16

17 hits Apply

R-PSSO-G2 16

17 hits Apply

e0 3 e3 12

17 hits Apply

Manufacturer (2)

Infineon Technologies AG 8 International Rectifier 9

17 hits Apply

1 16

17 hits Apply

Number of Elements (1)

1 16

17 hits Apply

Number of Terminals (1)

2 16

17 hits Apply

ENHANCEMENT MODE 16

17 hits Apply

150.0 °C 6 175.0 °C 9

Min (°C) - Max (°C)

17 hits Apply

PLASTIC/EPOXY 16

17 hits Apply

RECTANGULAR 16

17 hits Apply

SMALL OUTLINE 16

17 hits Apply

Active 2 Not Recommended 2 Obsolete 6 Transferred 7

17 hits Apply

No 2 Yes 6

17 hits Apply

225 3 260 5 NOT SPECIFIED 2

17 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 16

17 hits Apply

140 W 15

17 hits Apply

Surface Mount (1)

YES 16

17 hits Apply