Parametric results for: IRF123 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

12 hits Apply

Configuration (2)

SINGLE 9 SINGLE WITH BUILT-IN DIODE 2

12 hits Apply

DS Breakdown Voltage-Min (1)

80 V 5

12 hits Apply

Drain Current-Max (ID) (2)

7 A 6 8 A 5

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (1)

360 mΩ 4

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

12 hits Apply

TO-204AA 4

12 hits Apply

O-MBFM-P2 4

12 hits Apply

e0 9

12 hits Apply

Manufacturer (12)

Fairchild Semiconductor Corporation 1 FCI Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 1 International Rectifier 1 Intersil Corporation 1 National Semiconductor Corporation 1 New Jersey Semiconductor Products Inc 1 Rochester Electronics LLC 1 Samsung Semiconductor 1 Texas Instruments 1 Thomson Consumer Electronics 1

12 hits Apply

Number of Elements (1)

1 11

12 hits Apply

Number of Terminals (1)

2 4

12 hits Apply

ENHANCEMENT MODE 11

12 hits Apply

150.0 °C 7 175.0 °C 2

Min (°C) - Max (°C)

12 hits Apply

METAL 4

12 hits Apply

ROUND 4

12 hits Apply

FLANGE MOUNT 4

12 hits Apply

Active 2 Contact Manufacturer 1 Obsolete 6 Transferred 3

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

12 hits Apply

60 W 2

12 hits Apply

40 W 9

12 hits Apply

Surface Mount (1)

NO 10

12 hits Apply