Parametric results for: IRF140SMD under Power Field-Effect Transistors

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Manufacturer Part Number: irf140smd
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IRF140SMDR4
TT Electronics Power and Hybrid / Semelab Limited
Check for Price Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 28 A 125 mΩ 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 112 A SILICON TO-276AB R-XBCC-N3 e4 Not Qualified 150 °C DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM SEMELAB LTD TO-276AB CHIP CARRIER, R-XBCC-N3 3 compliant EAR99
IRF140SMDR4
TT Electronics Resistors
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 28 A 125 mΩ 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 112 A SILICON TO-276AB R-XBCC-N3 e4 Not Qualified 150 °C DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM TT ELECTRONICS PLC CHIP CARRIER, R-XBCC-N3 compliant EAR99
IRF140SMD-JQR-B
TT Electronics Resistors
Check for Price No Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 28 A 125 mΩ 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 112 A SILICON TO-276AB R-XBCC-N3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM TT ELECTRONICS PLC CHIP CARRIER, R-XBCC-N3 compliant EAR99
IRF140SMD
TT Electronics Resistors
Check for Price No Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 28 A 125 mΩ 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 112 A SILICON TO-276AB R-XBCC-N3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM TT ELECTRONICS PLC HERMETIC SEALED, SMD1, 3 PIN compliant EAR99
IRF140SMD-JQR-BR4
TT Electronics Resistors
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 28 A 125 mΩ 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 112 A SILICON TO-276AB R-XBCC-N3 e4 Not Qualified 150 °C DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM TT ELECTRONICS PLC CHIP CARRIER, R-XBCC-N3 compliant EAR99
IRF140SMD-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
Check for Price No No Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 28 A 125 mΩ 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 112 A SILICON TO-276AB R-XBCC-N3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM SEMELAB LTD TO-276AB CHIP CARRIER, R-XBCC-N3 3 compliant EAR99
IRF140SMD
TT Electronics Power and Hybrid / Semelab Limited
Check for Price No No Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 28 A 125 mΩ 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 112 A SILICON TO-276AB R-XBCC-N3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM SEMELAB LTD TO-276AB CHIP CARRIER, R-XBCC-N3 3 compliant EAR99
IRF140SMD-JQR-BR4
TT Electronics Power and Hybrid / Semelab Limited
Check for Price Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 28 A 125 mΩ 250 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 112 A SILICON TO-276AB R-XBCC-N3 e4 Not Qualified 150 °C DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD NO LEAD BOTTOM SEMELAB LTD TO-276AB CHIP CARRIER, R-XBCC-N3 3 compliant EAR99