Parametric results for: IRF533FI under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 1

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ISOLATED 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

80 V 1

1 hit Apply

Drain Current-Max (ID) (1)

8 A 1

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Drain-source On Resistance-Max (1)

230 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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R-PSFM-T3 1

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e0 1

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Manufacturer (1)

STMicroelectronics 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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35 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply