Parametric results for: IRF5Y1310CM under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

210.0 mJ 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 5

5 hits Apply

Drain Current-Max (ID) (1)

18 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

44 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-257AA 5

5 hits Apply

S-MSFM-P3 5

5 hits Apply

e0 1

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 International Rectifier 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 3

5 hits Apply

METAL 5

5 hits Apply

SQUARE 5

5 hits Apply

FLANGE MOUNT 5

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Yes 1

5 hits Apply

260 1 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

100 W 1

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply