Parametric results for: IRF640NPBF under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 2

2 hits Apply

247.0 mJ 2

2 hits Apply

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

200 V 2

2 hits Apply

Drain Current-Max (ID) (1)

18 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

150 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-220AB 2

2 hits Apply

R-PSFM-T3 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1 175.0 °C 1

Min (°C) - Max (°C)

2 hits Apply

-55.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

250 1 NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

150 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply