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IRF640STRLPBF
Vishay Intertechnologies
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$1.6100 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | LEAD FREE, PLASTIC, D2PAK-3 | not_compliant | EAR99 | Vishay | |||||||
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IRF640STRRPBF
Vishay Intertechnologies
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$2.0729 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | 175 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | LEAD FREE, PLASTIC, D2PAK-3 | compliant | EAR99 | Vishay | ||||||||||
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IRF640STRL
Vishay Intertechnologies
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | PLASTIC, D2PAK-3 | unknown | EAR99 | |||||||||||||
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IRF640STRRPBF
International Rectifier
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 130 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC, D2PAK-3 | compliant | EAR99 | D2PAK | 3 | 8541.29.00.95 | ||||
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IRF640STRL
International Rectifier
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE | 2 | 200 V | 1 | 18 A | 180 mΩ | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 130 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 1 | 150 °C | 225 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-263, 3 PIN | compliant | EAR99 | D2PAK | 4 | 8541.29.00.95 | ||||
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IRF640STRL
Vishay Siliconix
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | VISHAY SILICONIX | TO-263, D2PAK-3 | compliant | EAR99 | D2PAK | 4 | |||||||||
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IRF640STRR
International Rectifier
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE | 2 | 200 V | 1 | 18 A | 180 mΩ | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 130 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 1 | 150 °C | 225 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | D2PAK | 4 | 8541.29.00.95 | ||||
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IRF640STRRPBF
Vishay Siliconix
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY SILICONIX | ROHS COMPLIANT, TO-263, D2PAK-3 | compliant | EAR99 | Vishay | D2PAK | 4 | ||||||||
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IRF640STRLPBF
Vishay Siliconix
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY SILICONIX | ROHS COMPLIANT, TO-263, D2PAK-3 | compliant | EAR99 | Vishay | D2PAK | 4 | ||||||||
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IRF640STRLPBF
International Rectifier
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 130 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC, D2PAK-3 | compliant | EAR99 | D2PAK | 3 | 8541.29.00.95 |