Parametric results for: IRF6623 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

43.0 mJ 8

8 hits Apply

DRAIN 8

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

20 V 8

8 hits Apply

Drain Current-Max (ID) (1)

16 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

5.7 mΩ 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

R-XBCC-N3 8

8 hits Apply

e1 2 e4 6

8 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 International Rectifier 5

8 hits Apply

1 1 3 6

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

3 8

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 8

8 hits Apply

UNSPECIFIED 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

CHIP CARRIER 8

8 hits Apply

Active 3 Obsolete 2 Transferred 3

8 hits Apply

Yes 3

8 hits Apply

260 7

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

42 W 7

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply