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IRF6636TRPBF
Infineon Technologies AG
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$1.4826 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 18 A | 4.5 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 A | SWITCHING | SILICON | R-XBCC-N3 | Not Qualified | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||
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IRF6636PBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 18 A | 4.5 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | CHIP CARRIER, R-XBCC-N3 | 3 | ||||
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IRF6636TR1PBF
Infineon Technologies AG
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Check for Price | Yes | Active | INFINEON TECHNOLOGIES AG | compliant | ||||||||||||||||||||||||||||||||||||
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IRF6636TR1
International Rectifier
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 18 A | 4.5 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 140 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | ISOMETRIC-3 | 3 | ||||
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IRF6636TR1PBF
International Rectifier
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 18 A | 4.5 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | ROHS COMPLIANT, ISOMETRIC-3 | 3 | ||||
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IRF6636
International Rectifier
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 18 A | 4.5 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 140 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | unknown | EAR99 | ISOMETRIC-3 | 3 | ||||
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IRF6636PBF
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 18 A | 4.5 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | CHIP CARRIER, R-XBCC-N3 | ||||||
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IRF6636
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 18 A | 4.5 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Silver/Nickel (Ag/Ni) | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | CHIP CARRIER, R-XBCC-N3 | ||||||
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IRF6636TRPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 18 A | 4.5 mΩ | 28 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 A | SWITCHING | SILICON | R-XBCC-N3 | e4 | Not Qualified | 3 | 150 °C | 260 | 30 | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | SILVER NICKEL | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | ROHS COMPLIANT, ISOMETRIC-3 | 3 |