Parametric results for: IRF6668 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

24.0 mJ 7

9 hits Apply

DRAIN 7

9 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 7

9 hits Apply

DS Breakdown Voltage-Min (1)

80 V 7

9 hits Apply

Drain Current-Max (ID) (1)

55 A 8

9 hits Apply

Drain-source On Resistance-Max (1)

15 mΩ 7

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

R-XBCC-N3 7

9 hits Apply

e0 2 e1 2 e4 3

9 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 International Rectifier 5

9 hits Apply

1 3 3 3

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

3 7

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

150.0 °C 8

9 hits Apply

-40.0 °C 1

9 hits Apply

UNSPECIFIED 7

9 hits Apply

RECTANGULAR 7

9 hits Apply

CHIP CARRIER 7

9 hits Apply

Not Recommended 4 Obsolete 3 Transferred 2

9 hits Apply

Yes 3

9 hits Apply

260 3 NOT SPECIFIED 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

89 W 8

9 hits Apply

Surface Mount (1)

YES 8

9 hits Apply