Parametric results for: IRF6668TR1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

24.0 mJ 2

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

80 V 2

3 hits Apply

Drain Current-Max (ID) (1)

55 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

15 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-XBCC-N3 2

3 hits Apply

e0 1 e4 1

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 2

3 hits Apply

3 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 2

3 hits Apply

UNSPECIFIED 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

CHIP CARRIER 2

3 hits Apply

Not Recommended 1 Obsolete 2

3 hits Apply

Yes 1

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

89 W 2

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply