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IRF7555TR
International Rectifier
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$0.1492 | No | Obsolete | P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 20 V | 2 | 4.3 A | 55 mΩ | ULTRA-LOW RESISTANCE, HIGH RELIABILITY | 36 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 34 A | SILICON | R-PDSO-G8 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | MICRO-8 | 8 | compliant | EAR99 | ||||||||||||
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IRF7402
International Rectifier
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$0.1875 | No | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 20 V | 1 | 6.8 A | 35 mΩ | FAST SWITCHING | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | 54 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e0 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | SMALL OUTLINE, R-PDSO-G8 | 8 | compliant | EAR99 | SOIC | |||||||
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IRF7201PBF
International Rectifier
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$0.1900 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 7.3 A | 30 mΩ | HIGH RELIABILITY | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | 58 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | LEAD FREE, SO-8 | 8 | compliant | EAR99 | SOIC | ||||
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IRF7105PBF
International Rectifier
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$0.2030 | Yes | Yes | Transferred | N-CHANNEL AND P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 25 V | 2 | 3.5 A | 100 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | 14 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | LEAD FREE, SO-8 | 8 | unknown | EAR99 | SOIC | ||||||
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IRF7309PBF
International Rectifier
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$0.2320 | Yes | Yes | Transferred | N-CHANNEL AND P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 4 A | 50 mΩ | ULTRA LOW RESISTANCE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.4 W | 16 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | LEAD FREE, SOP-8 | 8 | compliant | EAR99 | SOIC | |||||
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IRF7303PBF
International Rectifier
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$0.2460 | Yes | Yes | Transferred | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 30 V | 2 | 4.9 A | 50 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.4 W | 20 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | LEAD FREE, SO-8 | 8 | unknown | EAR99 | SOIC | |||||
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IRF7104TRPBF
Infineon Technologies AG
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$0.2462 | Yes | Not Recommended | P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 20 V | 2 | 2.3 A | 250 mΩ | ULTRA LOW RESISTANCE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 10 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G8 | compliant | EAR99 | Infineon | ||||||||||
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IRF7343PBF
International Rectifier
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$0.2680 | Yes | Yes | Transferred | N-CHANNEL AND P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 4.7 A | 50 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 72 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | 38 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | LEAD FREE, SO-8 | 8 | unknown | EAR99 | SOIC | ||||
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IRF7201PBF
Infineon Technologies AG
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$0.2707 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 7.3 A | 30 mΩ | HIGH RELIABILITY | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | 58 A | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||
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IRF7465PBF
International Rectifier
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$0.2750 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 150 V | 1 | 1.9 A | 280 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | SWITCHING | SILICON | MS-012AA | R-PDSO-G8 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | LEAD FREE, SOP-8 | 8 | compliant | EAR99 | SOIC |