Parametric results for: IRF7304TR under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 4

6 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

6 hits Apply

Drain Current-Max (ID) (2)

3.6 A 4 4.3 A 1

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

90 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

R-PDSO-G8 4

6 hits Apply

e0 1 e3 2

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 International Rectifier 3

6 hits Apply

1 3 2 1

6 hits Apply

Number of Elements (1)

2 4

6 hits Apply

Number of Terminals (1)

8 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 3

6 hits Apply

-55.0 °C 1

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Obsolete 3 Transferred 3

6 hits Apply

Yes 1

6 hits Apply

260 1 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

6 hits Apply

2 W 3

6 hits Apply

Surface Mount (1)

YES 5

6 hits Apply