Parametric results for: IRF7311 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY 7 AVALANCHE RATED, ULTRA-LOW RESISTANCE 1 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY 1

9 hits Apply

100.0 mJ 9

9 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

20 V 9

9 hits Apply

Drain Current-Max (ID) (1)

6.6 A 9

9 hits Apply

Drain-source On Resistance-Max (1)

29 mΩ 9

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

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MS-012AA 9

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R-PDSO-G8 9

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e0 3 e3 5

9 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 International Rectifier 5

9 hits Apply

1 6 2 1

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Number of Elements (1)

2 9

9 hits Apply

Number of Terminals (1)

8 9

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ENHANCEMENT MODE 9

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150.0 °C 6

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PLASTIC/EPOXY 9

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RECTANGULAR 9

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SMALL OUTLINE 9

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Obsolete 5 Transferred 4

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No 1 Yes 2

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260 4 NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

2 W 5

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1.4 W 3 2 W 1

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply