Parametric results for: IRF9231 under Other Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

500.0 mJ 2

8 hits Apply

DRAIN 4

8 hits Apply

Configuration (2)

SINGLE 5 SINGLE WITH BUILT-IN DIODE 2

8 hits Apply

DS Breakdown Voltage-Min (1)

150 V 5

8 hits Apply

Drain Current-Max (ID) (2)

5 A 2 6.5 A 5

Min (A) - Max (A)

8 hits Apply

Drain-source On Resistance-Max (1)

800 mΩ 5

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

TO-204 1 TO-204AA 4

8 hits Apply

O-MBFM-P2 5

8 hits Apply

e0 6

8 hits Apply

Manufacturer (8)

Harris Semiconductor 1 International Rectifier 1 Intersil Corporation 1 New Jersey Semiconductor Products Inc 1 Rochester Electronics LLC 1 Samsung Semiconductor 1 Thomson Consumer Electronics 1 Vishay Siliconix 1

8 hits Apply

Number of Elements (1)

1 7

8 hits Apply

Number of Terminals (1)

2 5

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 5

8 hits Apply

METAL 5

8 hits Apply

ROUND 5

8 hits Apply

FLANGE MOUNT 5

8 hits Apply

Active 1 Contact Manufacturer 1 Obsolete 5 Transferred 1

8 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 8

8 hits Apply

75 W 2

8 hits Apply

75 W 5

8 hits Apply

Surface Mount (1)

NO 7

8 hits Apply