Parametric results for: IRF9Z10, under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

1.0 mJ 1 140.0 mJ 4

Min (mJ) - Max (mJ)

34 hits Apply

DRAIN 29

34 hits Apply

Configuration (2)

SINGLE 29 SINGLE WITH BUILT-IN DIODE 4

34 hits Apply

DS Breakdown Voltage-Min (2)

50 V 30 60 V 2

Min (V) - Max (V)

34 hits Apply

Drain Current-Max (ID) (2)

4.7 A 28 6.7 A 5

Min (A) - Max (A)

34 hits Apply

Drain-source On Resistance-Max (1)

500 mΩ 32

34 hits Apply

METAL-OXIDE SEMICONDUCTOR 33

34 hits Apply

TO-220AB 9

34 hits Apply

R-PSFM-T3 32

34 hits Apply

e0 16 e3 15

34 hits Apply

Manufacturer (5)

International Rectifier 26 Samsung Semiconductor 1 Thomson Consumer Electronics 1 Vishay Intertechnologies 4 Vishay Siliconix 2

34 hits Apply

Number of Elements (1)

1 33

34 hits Apply

Number of Terminals (1)

3 32

34 hits Apply

ENHANCEMENT MODE 33

34 hits Apply

150.0 °C 3 175.0 °C 4

Min (°C) - Max (°C)

34 hits Apply

PLASTIC/EPOXY 32

34 hits Apply

RECTANGULAR 32

34 hits Apply

FLANGE MOUNT 32

34 hits Apply

Active 4 Obsolete 2 Transferred 28

34 hits Apply

No 14 Yes 15

34 hits Apply

260 1 NOT SPECIFIED 1

34 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 33

34 hits Apply

20 W 1

34 hits Apply

20 W 4 43 W 1

Min (W) - Max (W)

34 hits Apply

Surface Mount (1)

NO 33

34 hits Apply