Parametric results for: IRFBG30 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 5

50 hits Apply

280.0 mJ 39

50 hits Apply

DRAIN 44

50 hits Apply

Configuration (2)

SINGLE 44 SINGLE WITH BUILT-IN DIODE 5

50 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 48

50 hits Apply

Drain Current-Max (ID) (2)

2.3 A 3 3.1 A 46

Min (A) - Max (A)

50 hits Apply

Drain-source On Resistance-Max (2)

5 Ω 45 5.6 Ω 3

Min (Ω) - Max (Ω)

50 hits Apply

METAL-OXIDE SEMICONDUCTOR 49

50 hits Apply

50 pF 2

50 hits Apply

TO-220AB 45

50 hits Apply

R-PSFM-T3 48

50 hits Apply

e0 23 e3 22

50 hits Apply

Manufacturer (5)

International Rectifier 42 Semiconductor Technology Inc 1 Thomson Consumer Electronics 1 Vishay Intertechnologies 4 Vishay Siliconix 2

50 hits Apply

1 1

50 hits Apply

Number of Elements (1)

1 49

50 hits Apply

Number of Terminals (1)

3 48

50 hits Apply

ENHANCEMENT MODE 49

50 hits Apply

150.0 °C 42

50 hits Apply

-55.0 °C 3

50 hits Apply

PLASTIC/EPOXY 48

50 hits Apply

RECTANGULAR 48

50 hits Apply

FLANGE MOUNT 48

50 hits Apply

Active 3 Contact Manufacturer 1 Obsolete 2 Transferred 44

50 hits Apply

No 22 Yes 23

50 hits Apply

225 1 250 1 260 2 NOT SPECIFIED 2

50 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 47 P-CHANNEL 2

50 hits Apply

125 W 37

50 hits Apply

125 W 6

50 hits Apply

Surface Mount (1)

NO 49

50 hits Apply