Parametric results for: IRFD310 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3

12 hits Apply

DRAIN 5

12 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 10

12 hits Apply

DS Breakdown Voltage-Min (1)

400 V 10

12 hits Apply

Drain Current-Max (ID) (2)

350 mA 3 400 mA 9

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (1)

3.6 Ω 10

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

R-PDIP-T3 8 R-PDIP-T4 2

12 hits Apply

e0 8 e3 3

12 hits Apply

Manufacturer (8)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 2 International Rectifier 2 Intersil Corporation 2 Rochester Electronics LLC 1 Thomson Consumer Electronics 2 Vishay Intertechnologies 1 Vishay Siliconix 1

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (2)

3 8 4 2

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

150.0 °C 11

12 hits Apply

PLASTIC/EPOXY 10

12 hits Apply

RECTANGULAR 10

12 hits Apply

IN-LINE 10

12 hits Apply

Active 2 Obsolete 5 Transferred 5

12 hits Apply

Yes 2

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

1.3 W 1

12 hits Apply

1 W 10

12 hits Apply

Surface Mount (1)

NO 12

12 hits Apply