Parametric results for: IRFD9110, under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

14 hits Apply

140.0 mJ 3

14 hits Apply

DRAIN 3

14 hits Apply

Configuration (3)

SINGLE 1 Single 1 SINGLE WITH BUILT-IN DIODE 12

14 hits Apply

DS Breakdown Voltage-Min (1)

100 V 10

14 hits Apply

Drain Current-Max (Abs) (ID) (1)

700 mA 1

14 hits Apply

Drain Current-Max (ID) (1)

700 mA 12

14 hits Apply

Drain-source On Resistance-Max (1)

1.2 Ω 10

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

14 hits Apply

R-PDIP-T3 9 R-PDIP-T4 3

14 hits Apply

e0 9

14 hits Apply

Manufacturer (11)

Fairchild Semiconductor Corporation 1 Freescale Semiconductor 1 Harris Semiconductor 1 International Rectifier 2 Intersil Corporation 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 Rochester Electronics LLC 1 Thomson Consumer Electronics 1 Vishay Intertechnologies 2 Vishay Siliconix 2

14 hits Apply

Number of Elements (1)

1 13

14 hits Apply

Number of Terminals (2)

3 9 4 3

14 hits Apply

ENHANCEMENT MODE 12

14 hits Apply

150.0 °C 2 175.0 °C 11

Min (°C) - Max (°C)

14 hits Apply

PLASTIC/EPOXY 12

14 hits Apply

RECTANGULAR 12

14 hits Apply

IN-LINE 12

14 hits Apply

Active 1 End Of Life 2 Obsolete 7 Transferred 4

14 hits Apply

No 2 Yes 2

14 hits Apply

NOT SPECIFIED 3

14 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 13

14 hits Apply

1.3 W 3

14 hits Apply

1 W 1 1.3 W 11

Min (W) - Max (W)

14 hits Apply

Surface Mount (1)

NO 14

14 hits Apply