Parametric results for: IRFF111R under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

19.0 mJ 2

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

80 V 2

3 hits Apply

Drain Current-Max (ID) (1)

3.5 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

600 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-205AF 2

3 hits Apply

O-MBCY-W3 2

3 hits Apply

e0 3

3 hits Apply

Manufacturer (3)

Harris Semiconductor 1 Intersil Corporation 1 Thomson Consumer Electronics 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

METAL 2

3 hits Apply

ROUND 2

3 hits Apply

CYLINDRICAL 2

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

15 W 2

3 hits Apply

15 W 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply