Parametric results for: IRFF9110 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

87.0 mJ 4

17 hits Apply

Configuration (2)

SINGLE 13 SINGLE WITH BUILT-IN DIODE 4

17 hits Apply

DS Breakdown Voltage-Min (2)

80 V 2 100 V 14

Min (V) - Max (V)

17 hits Apply

Drain Current-Max (ID) (3)

2.3 A 1 2.5 A 15 2.6 A 1

Min (A) - Max (A)

17 hits Apply

Drain-source On Resistance-Max (2)

1.2 Ω 8 1.38 Ω 4

Min (Ω) - Max (Ω)

17 hits Apply

METAL-OXIDE SEMICONDUCTOR 17

17 hits Apply

TO-205AF 12

17 hits Apply

O-MBCY-W3 12

17 hits Apply

e0 3 e1 2

17 hits Apply

Manufacturer (6)

Infineon Technologies AG 2 International Rectifier 2 New Jersey Semiconductor Products Inc 4 Thomson Consumer Electronics 1 TT Electronics Power and Hybrid / Semelab Limited 4 TT Electronics Resistors 4

17 hits Apply

Number of Elements (1)

1 17

17 hits Apply

Number of Terminals (1)

3 12

17 hits Apply

ENHANCEMENT MODE 17

17 hits Apply

150.0 °C 3

17 hits Apply

METAL 12

17 hits Apply

ROUND 12

17 hits Apply

CYLINDRICAL 12

17 hits Apply

Active 12 Contact Manufacturer 2 Obsolete 1 Transferred 2

17 hits Apply

No 3 Yes 3

17 hits Apply

260 2 NOT APPLICABLE 1 NOT SPECIFIED 7

17 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 17

17 hits Apply

15 W 1

17 hits Apply

15 W 2

17 hits Apply

Surface Mount (1)

NO 13

17 hits Apply