Parametric results for: IRFG9110-15 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 4

4 hits Apply

75.0 mJ 4

4 hits Apply

Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

4 hits Apply

Drain Current-Max (ID) (1)

750 mA 4

4 hits Apply

Drain-source On Resistance-Max (1)

1.73 Ω 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

MO-036AB 4

4 hits Apply

R-CDIP-T14 4

4 hits Apply

e0 2

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

Number of Elements (1)

4 4

4 hits Apply

Number of Terminals (1)

14 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Active 2 Transferred 2

4 hits Apply

No 1 Yes 1

4 hits Apply

260 1 NOT APPLICABLE 1 NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

1.4 W 1

4 hits Apply

1.4 W 1

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply