Findchips.com

Register or Sign In

Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: IRFHM792 under Power Field-Effect Transistors

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		IRFHM792TRPBF International Rectifier
		IRFHM792TR2PBF International Rectifier
		IRFHM792TR2PBF Infineon Technologies AG
		IRFHM792TRPBF Infineon Technologies AG

				Most Relevant								Technical							Compliance		Operating Conditions				Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JESD-30 Code	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	Samacsys Manufacturer

Check for Price

Yes

Yes

Transferred

N-CHANNEL

YES

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8

100 V

2

2.3 A

195 mΩ

10.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

10.4 W

14 A

SWITCHING

SILICON

S-PDSO-N8

e3

1

150 °C

DRAIN

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

MATTE TIN

NO LEAD

DUAL

INTERNATIONAL RECTIFIER CORP

QFN

SMALL OUTLINE, S-PDSO-N8

8

compliant

EAR99

Check for Price

Yes

Yes

Obsolete

N-CHANNEL

YES

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8

100 V

2

2.3 A

195 mΩ

10.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

10.4 W

14 A

SWITCHING

SILICON

S-PDSO-N8

e3

1

150 °C

DRAIN

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

MATTE TIN

NO LEAD

DUAL

INTERNATIONAL RECTIFIER CORP

QFN

3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

8

compliant

EAR99

Check for Price

Yes

Active

INFINEON TECHNOLOGIES AG

compliant

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8

100 V

2

2.3 A

195 mΩ

10.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

10.4 W

14 A

SWITCHING

SILICON

S-PDSO-N8

e3

1

150 °C

260

40

DRAIN

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

Matte Tin (Sn)

NO LEAD

DUAL

INFINEON TECHNOLOGIES AG

SMALL OUTLINE, S-PDSO-N8

compliant

EAR99

Infineon

Compare

International Rectifier

Check for Price

Yes

Yes

Transferred

N-CHANNEL

YES

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8

100 V

2

2.3 A

195 mΩ

10.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

10.4 W

14 A

SWITCHING

SILICON

S-PDSO-N8

e3

1

150 °C

DRAIN

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

MATTE TIN

NO LEAD

DUAL

INTERNATIONAL RECTIFIER CORP

QFN

SMALL OUTLINE, S-PDSO-N8

8

compliant

EAR99

International Rectifier

Check for Price

Yes

Yes

Obsolete

N-CHANNEL

YES

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8

100 V

2

2.3 A

195 mΩ

10.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

10.4 W

14 A

SWITCHING

SILICON

S-PDSO-N8

e3

1

150 °C

DRAIN

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

MATTE TIN

NO LEAD

DUAL

INTERNATIONAL RECTIFIER CORP

QFN

3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

8

compliant

EAR99

Infineon Technologies AG

Check for Price

Yes

Active

INFINEON TECHNOLOGIES AG

compliant

Infineon Technologies AG

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8

100 V

2

2.3 A

195 mΩ

10.2 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

10.4 W

14 A

SWITCHING

SILICON

S-PDSO-N8

e3

1

150 °C

260

40

DRAIN

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

Matte Tin (Sn)

NO LEAD

DUAL

INFINEON TECHNOLOGIES AG

SMALL OUTLINE, S-PDSO-N8

compliant

EAR99

Infineon