Parametric results for: IRFI4019H-117P under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

77.0 mJ 2

4 hits Apply

ISOLATED 1

4 hits Apply

Configuration (1)

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

150 V 2

4 hits Apply

Drain Current-Max (ID) (1)

8.7 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

95 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSFM-T5 2

4 hits Apply

e3 2

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

Number of Elements (1)

2 2

4 hits Apply

Number of Terminals (1)

5 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Active 1 Obsolete 1 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

18 W 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply