Parametric results for: IRFL024N under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 8 AVALANCHE RATED, HIGH RELIABILITY 3

11 hits Apply

DRAIN 11

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

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DS Breakdown Voltage-Min (1)

55 V 11

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Drain Current-Max (ID) (2)

2.8 mA 4 2.8 A 7

Min (A) - Max (A)

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Drain-source On Resistance-Max (1)

75 mΩ 11

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METAL-OXIDE SEMICONDUCTOR 11

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TO-261AA 11

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R-PDSO-G4 3 R-PSSO-G3 8

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e0 3 e3 7

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Manufacturer (2)

Infineon Technologies AG 5 International Rectifier 6

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1 10

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Number of Elements (1)

1 11

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Number of Terminals (2)

3 8 4 3

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ENHANCEMENT MODE 11

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150.0 °C 11

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-55.0 °C 8

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PLASTIC/EPOXY 11

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RECTANGULAR 11

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SMALL OUTLINE 11

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Active 1 Not Recommended 2 Obsolete 3 Transferred 5

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Yes 4

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260 5 NOT SPECIFIED 2

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Polarity/Channel Type (1)

N-CHANNEL 11

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2.1 W 8

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Surface Mount (1)

YES 11

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