Parametric results for: IRFM150 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 8 AVALANCHE RATING 4 HIGH RELIABILITY 4

27 hits Apply

150.0 mJ 24

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ISOLATED 24

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Configuration (2)

SINGLE 6 SINGLE WITH BUILT-IN DIODE 20

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DS Breakdown Voltage-Min (1)

100 V 25

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Drain Current-Max (ID) (2)

30 A 1 34 A 25

Min (A) - Max (A)

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Drain-source On Resistance-Max (3)

65 mΩ 1 70 mΩ 4 81 mΩ 20

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 26

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TO-254AA 25

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R-MSFM-P3 12 S-MSFM-P3 13

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e0 6 e1 6

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Manufacturer (7)

Infineon Technologies AG 6 International Rectifier 6 Sensitron Semiconductors 1 Temic Semiconductors 1 Thomson-CSF Compsants Specific 1 TT Electronics Power and Hybrid / Semelab Limited 6 TT Electronics Resistors 6

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Number of Elements (1)

1 26

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Number of Terminals (1)

3 25

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ENHANCEMENT MODE 26

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150.0 °C 24

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METAL 25

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RECTANGULAR 12 SQUARE 13

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FLANGE MOUNT 25

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Active 13 Obsolete 8 Transferred 6

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No 6 Yes 6

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260 3 NOT SPECIFIED 11

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Polarity/Channel Type (1)

N-CHANNEL 26

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150 W 5

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150 W 6

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Surface Mount (1)

NO 26

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