Parametric results for: IRFNG50 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 6

6 hits Apply

860.0 mJ 6

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 6

6 hits Apply

Drain Current-Max (ID) (1)

5.5 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

2.25 Ω 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-CDSO-N3 6

6 hits Apply

e0 1

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 International Rectifier 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 3

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 4 Transferred 2

6 hits Apply

No 1 Yes 1

6 hits Apply

260 1 NOT SPECIFIED 3

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

150 W 1

6 hits Apply

100 W 1

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply